#BLF7G22L-130N NXP BLF7G22L-130N New 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz., BLF7G22L-130N pictures, BLF7G22L-130N price, #BLF7G22L-130N supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits „ Excellent ruggedness „ High efficiency „ Low Rth providing excellent thermal stability „ Designed for broadband operation (2000 MHz to 2200 MHz) „ Lower output capacitance for improved performance in Doherty applications „ Designed for low memory effects providing excellent digital pre-distortion capability „ Internally matched for ease of use „ Integrated ESD protection „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications „ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
1.2 Features and benefits „ Excellent ruggedness „ High efficiency „ Low Rth providing excellent thermal stability „ Designed for broadband operation (2000 MHz to 2200 MHz) „ Lower output capacitance for improved performance in Doherty applications „ Designed for low memory effects providing excellent digital pre-distortion capability „ Internally matched for ease of use „ Integrated ESD protection „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications „ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range
130 W LDMOS power transistor for ba
