Semikron SKM200GB063D

Semikron SKM200GB063D
#SKM200GB063D Semikron SKM200GB063D New Power Igbt Transistor , SKM200GB063D pictures, SKM200GB063D price, #SKM200GB063D supplier


SKM200GB063D not recommended for new design Features:
.N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT)
.Low tail current with low temperature dependence
.High short circuit capability, self limiting if term. G is clamped to E
.Pos. temp.-coeff. of V CEsat
.50 % less turn off losses
.30 % less short circuit current
.Very low C ies , C oes , C res
.Latch-up free Fast & soft inverse CAL diodes
.Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
.Large clearance (13 mm) and creepage distances (20 mm)
Typical Applications:
.Switching (not for liear use)
.Switched mode power supplies
.AC inverter servo drives
.UPS uninterruptable power supplies
.Welding inverters

Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:450A
Collector power dissipation Pc:875W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C

Power Igbt Transistor