Mitsubishi QM150DY-HB

#QM150DY-HB Mitsubishi QM150DY-HB New IGBT Power Transistor Modules 150A/1200V/GTR/2U, QM150DY-HB pictures, QM150DY-HB price, #QM150DY-HB supplier
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QM150DY-HB Description

IGBT Power Transistor Modules 150A/1200V/GTR/2U 

 

• Part Number: QM150DY-HB

• IC Collector current ........................ 100A

• VCEX Collector-emitter voltage ........... 1200V

• hFE DC current gain............................... 75

• Insulated Type

• UL Recognized

• Isolation voltage Charged part to case, AC for 1 minute 2500V

• Collector dissipation TC=25°C........ 800W

• Junction temperature Tj ...................+150°C

• Storage temperature Tstg..............-40 to +125°C

• Mounting screw torque ....................3.0 *1 N·m

• Typical value Weight .....................470g

IGBT Power Transistor Modules 150A/1200V/GTR/2U