Semikron SKM300GAR063D

Semikron SKM300GAR063D
#SKM300GAR063D Semikron SKM300GAR063D New IGBT module dual SKM300GB066D 300A 600V. , SKM300GAR063D pictures, SKM300GAR063D price, #SKM300GAR063D supplier

SKM300GAR063D Features:
.N channel,homogeneous silicon structure(NPT- Non punch-through IGBT )
.Low tail current with low temperature dependence
.High short circuit capability, self limiting if term. G is clamped to E
.Pos. temp.-coeff. of V CEsat
.50 % less turn off losses
.30 % less short circuit current
.Very low C ies , C oes , C res
.Latch-up free Fast & soft inverse CAL diodes
.Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
.Large clearance (13 mm) and creepage distances (20 mm)
Typical Applications:
.Switching (not for linear use)
.Switched mode power supplies
.AC inverter servo drives
.UPS uninterruptable power supplies
.Welding inverters  
1) Tcase = 25 °C, unless otherwise
2) IF = – IC, VR = 300 V,–diF/dt = 2000 A/µs, VGE = 0 V
3) Use VGEoff = – 5 ... – 15 V
8) CAL = Controlled Axial Lifetime Technology
9) Compared to PT-IGBT
Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:300A
Collector current Icp:450A
Collector power dissipation Pc:1350W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C

IGBT module dual SKM300GB066D 300A 600V.