#FF100R12RT4 Infineon FF100R12RT4 New 34 mm 1200V/100A dual switch IGBT module with fast TRENCHSTOP
IGBT4 and Emitter Controlled 4 diode., FF100R12RT4 pictures, FF100R12RT4 price, #FF100R12RT4 supplier
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Email: sales@shunlongwei.com
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IGBT4 and Emitter Controlled 4 diode., FF100R12RT4 pictures, FF100R12RT4 price, #FF100R12RT4 supplier -------------------------------------------------------------------
Email: sales@shunlongwei.com
FF100R12RT4 Datasheet
Typical Applications
• High Power Converters
• Motor Drives
• UPS Systems
Electrical Features
• Extended Operation Temperature Tvjop
• Low Switching Losses
• Low VCEsat
• Tvjop=150°C
• VCEsat with positive Temperature Coefficient
MaximumRatedValues
Kollektor Emitter Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V
Typical Applications
• High Power Converters
• Motor Drives
• UPS Systems
Electrical Features
• Extended Operation Temperature Tvjop
• Low Switching Losses
• Low VCEsat
• Tvjop=150°C
• VCEsat with positive Temperature Coefficient
MaximumRatedValues
Kollektor Emitter Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V
Kollektor Dauergleichstrom ContinuousD Ccollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 100 A
Periodischer Kollektor Spitzenstrom Repetitive peakcollector current tP = 1 ms ICRM 200 A
Gesamt Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 555 W
Gate Emitter Spitzenspannung Gate emitter peak voltage VGES +/-20 V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op -40 150 °C
34 mm 1200V/100A dual switch IGBT module with fast TRENCHSTOP
IGBT4 and Emitter Controlled 4 diode. 
