IXYS IXFN55N50

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IXYS IXFN55N50
#IXFN55N50 IXYS IXFN55N50 New Discrete Semiconductor Modules 55 Amps 500V 0.08 Rds, IXFN55N50 pictures, IXFN55N50 price, #IXFN55N50 supplier
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Manufacturer: IXYS
Product Category: Discrete Semiconductor Modules
RoHS: Details
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Mounting Style: Chassis Mount
Package / Case: SOT-227-4
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: HiPerFET
Packaging: Tube
Configuration: Single
Technology: Si
Brand: IXYS
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Fall Time: 45 ns
Id - Continuous Drain Current: 55 A
Pd - Power Dissipation: 625 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 90 mOhms
Rise Time: 60 ns
Factory Pack Quantity: 10
Subcategory: Discrete Semiconductor Modules
Tradename: HyperFET
Typical Turn-Off Delay Time: 120 ns
Typical Turn-On Delay Time: 45 ns
Vds - Drain-Source Breakdown Voltage: 500 V

Discrete Semiconductor Modules 55 Amps 500V 0.08 Rds