#BSM150GB120DN2 Infineon BSM150GB120DN2 New 2IGBT: 150A1200V;IGBT Modules 1200V 150A DUAL , BSM150GB120DN2 pictures, BSM150GB120DN2 price, #BSM150GB120DN2 supplier
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Email: [email protected]
BSM150GB120DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 210 A
Gate-Emitter Leakage Current: 320 nA
Pd - Power Dissipation: 1.25 kW
Package / Case: Half Bridge2
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
2IGBT: 150A1200V;IGBT Modules 1200V 150A DUAL
