#PM20CEF060-5 Mitsubishi PM20CEF060-5 New IGBT Module Transistor 30A/600V Dip, PM20CEF060-5 pictures, PM20CEF060-5 price, #PM20CEF060-5 supplier
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PM20CEF060-5
Power Device Junction Temperature Tj -20 to 150 °C
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC -20 to 100 °C
Mounting Torque, M4 Mounting Screws — 0.98 ~ 1.47 N · m
Module Weight (Typical) — 60 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part) VCC(prot.) 400 Volts
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, (TC = 25°C) IC 10 Amperes
Peak Collector Current, (TC = 25°C) ICP 20 Amperes
Supply Voltage (Applied between P - N) VCC 450 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 500 Volts
Collector Dissipation PC 39 Watts
IGBT Module Transistor 30A/600V Dip
