#BSM50GB170DN2 Infineon BSM50GB170DN2 New 50A/1700V/IGBT/2U;IGBT Modules 1700V 50A 500W HALF-BRIDGE , BSM50GB170DN2 pictures, BSM50GB170DN2 price, #BSM50GB170DN2 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
BSM50GB170DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1700 V
Collector-Emitter Saturation Voltage: 3.4 V
Continuous Collector Current at 25 C: 72 A
Gate-Emitter Leakage Current: 320 nA
Pd - Power Dissipation: 500 W
Package / Case: Half Bridge1
Maximum Operating Temperature: + 150 C
Packaging: Tray
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
50A/1700V/IGBT/2U;IGBT Modules 1700V 50A 500W HALF-BRIDGE
